©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
BC184LC
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 45 V
V
CEO
Collector-Emitter Voltage 30 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 200 mA
P
C
Collector Dissipation (T
a
=25°C) (Note 2, 3) 625 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Voltage I
C
= 10µA45V
BV
CEO
Collector-Emitter Voltage I
C
= 2mA 30 V
BV
EBO
Emitter-Base Voltage I
E
= 10µA5
I
CBO
Collector Cut-off Current V
CB
= 30V 15 nA
I
EBO
Emitter Cut-off Current V
EB
= 3V 15 nA
h
FE
DC Current Gain V
CE
= 5V, I
C
= 10µA
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 100mA
100
250
130
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
0.25
0.6
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 100mA, I
B
= 5mA 1.2 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 5V, I
C
= 2mA 0.55 0.7 V
C
OB
Output Capacitance V
CE
= 10V, f = 1MHz 5 pF
f
T
Current gain Bandwidth Product V
CE
= 5V, I
C
= 10mA
f = 100MHz
150 MHz
h
FE
Small Signal Current Gain V
CE
= 5V, I
C
= 2mA
f = 1KHz
450 900
NF Noise Figure V
CE
= 5V, I
C
= 200mA
R
G
= 2KΩ, f = 1KHz
4dB
BC184LC
Silicon NPN Small Signal Transistor (Note 1)
•BV
CEO
= 30V (Min.)
•h
FE
= 250 (Min.) @V
CE
= 5.0V, I
C
= 2mA
1. Emitter 2. Collector 3. Base
TO-92
1