1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
PNP Silicon
MAXIMUM RATINGS
Rating Symbol
BC
212
BC
213
BC
214 Unit
Collector–Emitter Voltage V
CEO
–50 –30 –30 Vdc
Collector–Base Voltage V
CBO
–60 –45 –45 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
357 °C/W
Thermal Resistance, Junction to Case R
C0113JC
125 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Collector–Emitter Breakdown Voltage BC212
(I
C
= –2.0 mAdc, I
B
= 0) BC213
BC214
V
(BR)CEO
–50
–30
–30
—
—
—
—
—
—
Vdc
Collector–Base Breakdown Voltage BC212
(I
C
= –10 C0109A, I
E
= 0) BC213
BC214
V
(BR)CBO
–60
–45
–45
—
—
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage BC212
(I
E
= –10 C0109Adc, I
C
= 0) BC213
BC214
V
(BR)EBO
–5
–5
–5
—
—
—
—
—
—
Vdc
Collector–Emitter Leakage Current BC212
(V
CB
= –30 V) BC213
BC214
I
CBO
—
—
—
—
—
—
–15
–15
–15
nAdc
Emitter–Base Leakage Current BC212
(V
EB
= –4.0 V, I
C
= 0) BC213
BC214
I
EBO
—
—
—
—
—
—
–15
–15
–15
nAdc
Order this document
by BC212/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0067C0050C0049C0050C0044C0066
C0066C0067C0050C0049C0051
C0066C0067C0050C0049C0052
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER