©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
BC183LC
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 45 V
V
CEO
Collector-Emitter Voltage 30 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 100 mA
P
C
Collector Dissipation (T
a
=25°C) 350 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Voltage I
C
= 10µA45V
BV
CEO
Collector-Emitter Voltage I
C
= 2mA 30 V
BV
EBO
Emitter-Base Voltage I
E
= 10µA5
I
CBO
Collector Cut-off Current V
CB
= 30V 15 nA
I
EBO
Emitter Cut-off Current V
EB
= 3V 15 nA
h
FE
DC Current Gain V
CE
= 5V, I
C
= 10µA
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 100mA
40
100
80
850
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
0.25
0.6
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 100mA, I
B
= 5mA 1.2 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 5V, I
C
= 2mA 0.55 0.7 V
C
OB
Output Capacitance V
CE
= 10V, f = 1MHz 5 pF
f
T
Current gain Bandwidth Product V
CE
= 5V, I
C
= 10mA 150 MHz
h
fe
Small Signal Current Gain V
CE
= 5V, I
C
= 2mA
f = 1KHz
450 900
NF Noise Figure V
CE
= 5V, I
C
= 200mA
R
G
= 2KΩ, f = 1KHz
10 dB
BC183LC
NPN General purpose Amplifier.
1. Emitter 2. Collector 3. Base
TO-92
1