©2002 Fairchild Semiconductor Corporation Rev. A, October 2002
BC182L
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
Thermal Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 50 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current - Continuous 100 mA
T
J,
T
STG
Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 2mA, I
B
= 0 50 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10µA, I
E
= 0 60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 100µA, I
C
= 0 6 V
I
CBO
Collector Cut-off Current V
CB
= 50V, V
BE
= 0 15 nA
I
EBO
Emitter-Base Leakage Current V
EB
= 4V, I
E
= 0 15 nA
On Characteristics
h
FE
DC Current Gain V
CE
= 5V, I
C
= 10µA
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 100mA
40
120
80
500
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
0.25
0.6
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 100mA, I
B
= 5mA 1.2 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 5V, I
C
= 2mA 0.55 0.7 V
Dynamic Characteristics
f
T
Current Gain Bandwidth Product V
CE
= 5V, I
C
= 10mA, f = 100MHz 150 MHz
C
ob
Output Capacitance V
CE
= 10V, I
C
= 0, f = 1MHz 5 pF
h
fe
Small Signal Current Gain V
CE
= 5V, I
C
= 2mA, f = 1KHz 240 500
NF Noise Figure V
CE
= 5V, I
C
= 0.2mA
R
S
= 2KΩ, f = 1KHz, BW = 200Hz
10 dB
Symbol Parameter Max. Units
P
D
Total Device Dissipation @T
A
=25°C
Derate above 25°C
350
2.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
BC182L
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 10.
1. Emitter 2. Collector 3. Base
TO-92
1