1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
NPN Silicon
MAXIMUM RATINGS
Rating Symbol
BC
182
BC
183
BC
184 Unit
Collector–Emitter Voltage V
CEO
50 30 30 Vdc
Collector–Base Voltage V
CBO
60 45 45 Vdc
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
357 °C/W
Thermal Resistance, Junction to Case R
C0113JC
125 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0) BC182
BC183
BC184
V
(BR)CEO
50
30
30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(I
C
= 10 C0109A, I
E
= 0) BC182
BC183
BC184
V
(BR)CBO
60
45
45
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage
(I
E
= 100 C0109A, I
C
= 0)
V
(BR)EBO
6.0 — — V
Collector Cutoff Current
(V
CB
= 50 V, V
BE
= 0) BC182
(V
CB
= 30 V, V
BE
= 0) BC183
BC184
I
CBO
—
—
—
0.2
0.2
0.2
15
15
15
nA
Emitter–Base Leakage Current
(V
EB
= 4.0 V, I
C
= 0)
I
EBO
— — 15 nA
Order this document
by BC182/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0067C0049C0056C0050C0044C0065C0044C0066
C0066C0067C0049C0056C0051
C0066C0067C0049C0056C0052
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER