1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–60 Vdc
Collector–Base Voltage V
CBO
–60 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–1.0 Adc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
0.8
4.6
Watts
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
3.7
20
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
219 °C/W
Thermal Resistance, Junction to Case R
C0113JC
50 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(I
E
= 0, V
CES
= –60 Vdc)
(I
E
= 0, V
CES
= –60 Vdc, T
Amb
= 150°C)
I
CES
—
—
–100
–100
nAdc
µAdc
Collector–Emitter Breakdown Voltage
(I
C
= –100 µAdc, I
E
= 0)
V
(BR)CES
–60 — Vdc
Collector–Emitter Breakdown Voltage
(1)
(I
C
= –10 mAdc, I
B
= 0)
V
(BR)CEO
–60 — Vdc
Emitter–Base Breakdown Voltage
(I
E
= –100 C0109Adc, I
C
= 0)
V
(BR)EBO
–5.0 — Vdc
1. Pulsed: Pulse Duration = 300 C0109s, Duty Cycle = 2.0%.
Order this document
by BC161–16/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0067C0049C0054C0049C0045C0049C0054
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
1
2
3
 Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER
(Replaces BC160–16/D)