Nov-14-2002
1
BBY66...
Silicon Tuning Diodes
G01 High capacitance ratio
G01 High Q hyperabrupt tuning diode
G01 Low series resistance
G01 Designed for low tuning voltage operation
for VCO's in mobile communications equipment
G01 Very low capacitance spread
BBY66-02V BBY66-05
BBY66-05W
G31 G32
G33
G31
G44G32
G32
G44G31
Type Package Configuration L
S
(nH) Marking
BBY66-02V*
BBY66-05
BBY66-05W*
SC79
SOT23
SOT323
single
common cathode
common cathode
0.6
1.8
1.4
h
O1s / O2s**
OBs
* Preliminary
**For differences see next page Capacitance groups
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
12 V
Forward current I
F
50 mA
Operating temperature range T
op
-55 ... 150
°C
Storage temperature T
stg
-55 ... 150