May-07-2003
1
BBY65...
Silicon Tuning Diode
G01 High Q hyperabrupt tuning diode
G01 Very low capacitance spread
G01 Designed for low tuning voltage operation
for VCO's in mobile communications equipment
G01 For low frequency control elements
such as TCXOS and VCXOS
G01 High capacitance ratio and good C-V linearity
BBY65-02V
G31 G32
Type Package Configuration L
S
(nH) Marking
BBY65-02V SC79 single 0.6 F
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
15 V
Forward current I
F
50 mA
Operating temperature range T
op
-55 ... 150
°C
Storage temperature T
stg
-55 ... 150