Jul-18-2002
1
BBY59...
Silicon Tuning Diode
G01 High Q hyperabrupt tuning diode
G01 Designed for low tuning voltage operation
for VCO's in moblie communications equipment
G01 For control elements as TCXOS and VCXOS
G01 High capacitance ratio and good C-V linearity
BBY59-02V
G31 G32
Type Package Configuration L
S
(nH) Marking
BBY59-02V SC79 single 0.6 RR
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
R
15 V
Forward current I
F
50 mA
Operating temperature range T
op
-55 ... 150
°C
Storage temperature T
stg
-55 ... 150