Jul-25-2003
1
BBY58...
Silicon Tuning Diodes
• Excellent linearity
• High Q hyperabrupt tuning diode
• Low series resistance
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• For low frequency control elements
such as TCXOs and VCXOs
• Very low capacitance spread
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W BBY58-07L4BBY58-06W
G31 G32
G31
G44 G32
G32
G33G34
G44 G31
G33
G31
G44 G32
G32
G44 G31
G33
G31
G44 G32
G32
G44 G31
Type Package Configuration L
S
(nH) Marking
BBY58-02L*
BBY58-02V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4*
TSLP-2-1
SC79
SCD80
SOD323
SOT323
SOT323
TSLP-4-4
single, leadless
single
single
single
common cathode
common anode
parallel pair, leadless
0.4
0.6
0.6
0.6
1.4
1.4
0.4
88
8
88
8 yel.
B5s
B6s
B8
*Preliminary
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
10 V
Forward current I
F
20 mA
Operating temperature range T
op
-55 ... 150
°C
Storage temperature T
stg
-55 ... 150