Mar-19-2003
1
BBY57...
Silicon Tuning Diode
G01 Excellent linearity
G01 High Q hyperabrupt tuning diode
G01 Low series resistance
G01 High capacitance ratio
G01 Designed for low tuning voltage operation
for VCO's in mobile communications equipment
G01 For control elements such as TCXOs and VCXOs
BBY57-02L
BBY57-02V
BBY57-02W
BBY57-05W
G31 G32
G33
G31
G44G32
G32
G44G31
Type Package Configuration L
S
(nH) Marking
BBY57-02L*
BBY57-02V
BBY57-02W
BBY57-05W
TSLP-2
SC79
SCD80
SOT323
single
single
single
common cathode
0.4
0.6
0.6
1.4
55
5
55
D5s
* Preliminary
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
10 V
Forward current I
F
20 mA
Operating temperature range T
op
-55 ... 125
°C
Storage temperature T
stg
-55 ... 150