Nov-14-2002
1
BBY55...
Silicon Tuning Diodes
G01 Excellent linearity
G01 High Q hyperabrupt tuning diode
G01 Low series resistance
G01 Designed for low tuning voltage operation
for VCO's in mobile communications equipment
G01 Very low capacitance spread
BBY55-02V
BBY55-02W
BBY55-03W
G31 G32
Type Package Configuration L
S
(nH) Marking
BBY55-02V
BBY55-02W
BBY55-03W
SC79
SCD80
SOD323
single
single
single
0.6
0.6
1.8
7
77
7 white
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
16 V
Forward current I
F
20 mA
Operating temperature range T
op
-55 ... 150
°C
Storage temperature T
stg
-55 ... 150