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BBY53-02W

器件描述:Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:12.47KB,共3页
Sponsor by e络盟
器件资料摘要:
BBY 53-02W
Semiconductor Group
Au -20-19981
Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO’s in mobile communications equipment
• High ratio at low reverse voltage
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BBY 53-02W L Q62702-B0862 1 = C 2 = A SCD-80
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
V
R
6 V
Forward current
I
F
20 mA
Operating temperature range
T
op
-55 ...+150 °C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group 1 1998-11-01