BBY53
器件描述:Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
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器件资料摘要:
Semiconductor Group 1 Feb-04-1997
BBY 53
Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• High ratio at low reverse voltage
Type Marking Ordering Code Pin Configuration Package
BBY 53 S7s Q62702-B824 1 = A1 2 = A2 3 = C1/C2 SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
6 V
Forward current I
F
20 mA
Operating temperature range T
op
- 55 ... + 150 °C
Storage temperature T
stg
- 55 ... + 150