BBY51-07
器件描述：Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：31.7KB，共3页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 Jan-08-1997
BBY 51-07
Silicon Tuning Diode
• High Q hyperabrupt dual tuning diode
• Designed for low tuning voltage operation
• For VCO's in mobile communications equipment
Type Marking Ordering Code Pin Configuration Package
BBY 51-07 HHs Q62702- 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143
Maximum Ratings per diode
Parameter Symbol Values Unit
Diode reverse voltage V
R
7 V
Forward current I
F
20 mA
Operating temperature range T
op
- 55 ... + 150 °C
Storage temperature T
stg
- 55 ... + 150
BBY 51-07
Silicon Tuning Diode
• High Q hyperabrupt dual tuning diode
• Designed for low tuning voltage operation
• For VCO's in mobile communications equipment
Type Marking Ordering Code Pin Configuration Package
BBY 51-07 HHs Q62702- 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143
Maximum Ratings per diode
Parameter Symbol Values Unit
Diode reverse voltage V
R
7 V
Forward current I
F
20 mA
Operating temperature range T
op
- 55 ... + 150 °C
Storage temperature T
stg
- 55 ... + 150