BBY51-03W
器件描述：Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：26.87KB，共3页
Sponsor by e络盟器件资料摘要：
BBY 51-03W
Semiconductor Group 1 Edition A01, 03.05.95
Type Marking Ordering Code
(tape and reel)
Pin Configuration
1 2
Package
1)
BBY 51-03W H Q62702-B663 C1 A2 SOD-323
Maximum Ratings
Parameter Symbol BBY 51-03W Unit
Reverse voltage VR 7V
Forward current I
F
20 mA
Operating temperature range T
op
-55 +150°C °C
Storage temperature range T
stg
-55...+150°C °C
______________________________
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon Tuning Diode
G6c High Q hyperabrupt tuning diode
G6c Designed for low tuning voltage operation
G6c For VCO's in mobile communications equipment
Semiconductor Group 1 Edition A01, 03.05.95
Type Marking Ordering Code
(tape and reel)
Pin Configuration
1 2
Package
1)
BBY 51-03W H Q62702-B663 C1 A2 SOD-323
Maximum Ratings
Parameter Symbol BBY 51-03W Unit
Reverse voltage VR 7V
Forward current I
F
20 mA
Operating temperature range T
op
-55 +150°C °C
Storage temperature range T
stg
-55...+150°C °C
______________________________
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Silicon Tuning Diode
G6c High Q hyperabrupt tuning diode
G6c Designed for low tuning voltage operation
G6c For VCO's in mobile communications equipment