BBY51-02W
器件描述：Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：14.27KB，共3页
Sponsor by e络盟器件资料摘要：
BBY 51-02W
Semiconductor Group
Jul-23-19981
Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Low series inductance
• Designed for low tuning voltage operation
• For VCO’s in mobile communications equipment
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BBY 51-02W I Q62702-B0858 1 = C 2 = A SCD-80
Maximum Ratings
Parameter Symbol UnitValue
Diode reverse voltage
V
R
V7
Forward current
I
F
mA20
-55 ...+150Operating temperature range °C
T
op
Storage temperature
T
stg
-55 ...+150
Semiconductor Group 1 1998-11-01
Semiconductor Group
Jul-23-19981
Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Low series inductance
• Designed for low tuning voltage operation
• For VCO’s in mobile communications equipment
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BBY 51-02W I Q62702-B0858 1 = C 2 = A SCD-80
Maximum Ratings
Parameter Symbol UnitValue
Diode reverse voltage
V
R
V7
Forward current
I
F
mA20
-55 ...+150Operating temperature range °C
T
op
Storage temperature
T
stg
-55 ...+150
Semiconductor Group 1 1998-11-01