BBY51
器件描述:Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
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器件资料摘要:
Semiconductor Group 1 Jan-09-1997
BBY 51
Silicon Tuning Diode
• High Q hyperabrupt dual tuning diode
• Designed for low tuning voltage operation
• For VCO's in mobile communications equipment
Type Marking Ordering Code Pin Configuration Package
BBY 51 S3 Q62702-B631 1 = A 2 = A 3 = C1/C2 SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
7 V
Forward current I
F
20 mA
Operating temperature range T
op
- 55 ... + 150 °C
Storage temperature T
stg
- 55 ... + 150