SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 – JANUARY 1998
PIN CONFIGURATION
PARTMARKING DETAIL
BBY31 – S1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V
BR
28.0 V I
R
= 10µA
Reverse current I
R
10
1.0
nA
µA
V
R
= 28V
V
R
= 28V, T
amb
= 85°C
TUNING CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Capacitance C
d
1.8
17.5
11.5
2.8
pF
pF
pF
V
R
= 1V, f=1MHz
V
R
= 3V, f=1MHz
V
R
= 25V, f=1MHz
Capacitance Ratio C
d
/ C
d
5.0 V
R
= 3V/25V, f=1MHz
Series Resistance r
d
1.2 Ω f=470MHz at the value
of V
R
at which C
d
=9pF
Spice parameter data is available upon request for this device
BBY31
1
3
2
SOT23
1
3