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BB835

器件描述:Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:24.27KB,共2页
Sponsor by e络盟
器件资料摘要:
Semiconductor Group 1 04.96
Type Marking Ordering Code
(tape and reel)
Pin Configuration Package
12
BB 835 yellow X Q62702-B802 C A SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R
30 V
Reverse voltage (R ≥ 5kΩ) V
RM
35 V
Forward current I
F
20 mA
Operating temperature range T
OP
– 55… +150 °C
Storage temperature range T
stg
– 55… +150 °C
Thermal Resistance
Junction - ambient
1)
R
th JA
≤ 450 K/W
1)
For detailed informatioon see chapter Package Outline
Silicon Tuning Diode
Preliminary data
BB 835
Features
a71 Extended frequency range up to 2.8 Ghz ;
special design for use in TV-sat indoor units
a71 High capacitance ratio