BB814
器件描述：Silicon Variable Capacitance Diode (For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：43.64KB，共3页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1
BB 814
Silicon Variable Capacitance Diode BB 814
a71 For FM radio tuners
with extended frequency band
a71 High tuning ratio at low supply voltage
(car radio)
a71 Monolithic chip (common cathode)
for perfect dual diode tracking
a71 Coded capacitance groups and
group matching available
Maximum Ratings per Diode
Type Ordering Code
(tape and reel)
Pin Configuration PackageMarking
BB 814 Q62702-B404 SH (see
Characteristics
for marking of
capacitance
subgroups)
SOT-23
Parameter Symbol Values Unit
Reverse voltage VR 18 V
Forward current, TA ≤ 60 ˚C IF 50 mA
Operating temperature range Top – 55 … + 125 ˚C
Storage temperature range Tstg – 55 … + 150
Thermal Resistance
Junction - ambient Rth JA ≤ 600 K/W
Peak reverse voltage VRM 20
10.94
BB 814
Silicon Variable Capacitance Diode BB 814
a71 For FM radio tuners
with extended frequency band
a71 High tuning ratio at low supply voltage
(car radio)
a71 Monolithic chip (common cathode)
for perfect dual diode tracking
a71 Coded capacitance groups and
group matching available
Maximum Ratings per Diode
Type Ordering Code
(tape and reel)
Pin Configuration PackageMarking
BB 814 Q62702-B404 SH (see
Characteristics
for marking of
capacitance
subgroups)
SOT-23
Parameter Symbol Values Unit
Reverse voltage VR 18 V
Forward current, TA ≤ 60 ˚C IF 50 mA
Operating temperature range Top – 55 … + 125 ˚C
Storage temperature range Tstg – 55 … + 150
Thermal Resistance
Junction - ambient Rth JA ≤ 600 K/W
Peak reverse voltage VRM 20
10.94