BB814
Vishay Telefunken
Rev. 3, 01-Apr-99 1 (3)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85555
Silicon Epitaxial Planar Dual Capacitance Diode
Features
C0068 Common cathode
Applications
Tuning of separate resonant circuits, push–pull circuits
in FM range, especially for car radios
94 8550
Absolute Maximum Ratings
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
RRM
20 V
Reverse voltage V
R
18 V
Forward current I
F
50 mA
Junction temperature T
j
125 C0176C
Storage temperature range T
stg
–55...+150 C0176C
Electrical Characteristics
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Reverse current V
R
=16V I
R
20 nA
V
R
=16V, T
j
=60C0176C I
R
200 nA
Diode capacitance
1
) V
R
=2V Group 1 C
D
43 45 pF
Group 2 C
D
44.5 46.5 pF
V
R
=8V Group 1 C
D
19.1 21.95 pF
Group 2 C
D
19.75 22.70 pF
Capacitance ratio V
R
=2V,8V, f=1MHz C
D2
/ C
D8
2.05 2.25
Series resistance C
D
=38pF, f=100MHz r
s
0.5 C0087
1
) In the reverse voltage range of V
R
=2...8V for 4 diodes taped in sequence the max. deviation is 3%.