LESHAN RADIO COMPANY, LTD.
S6–1/3
Silicon Variable Capacitance Diode
• For UHF and TV/TR tuners
Large capacitance ratio, low series resistance
CASE 477– 02, STYLE 1
SOD– 323
1
2
BB 535
2
ANODE
1
CATHODE
MAXIMUM RATINGS
Parameter Symbol Value Unit
Diode Reverse Voltage V R 30 V
Peak reverse voltage ( R > 5kΩ)VRM 35 V
Forward Current I F 20 mA
Operating temperature range T op - 55 ~ + 125 °C
Storage temperature T stg - 55 ... + 150 °C
THERMAL RESISTANCE
Parameter Symbol Value Unit
Junction - ambient R thJA <450 K/W
DC CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Reverse current I R nA
V R = 30 V, T A = 25 °C – – 10
V R = 30 V, T A = 85 °C – – 200
AC CHARACTERISTICS
Diode capacitance C T pF
V R = 1 V, f = 1 MHz 17.5 18.7 20
V R = 2 V, f = 1 MHz 14.01 15 16.1
V R = 25 V, f = 1 MHz 2.05 2.24 2.4
V R = 28 V, f = 1 MHz 1.9 2.1 2.3
Capacitance ratio C T2 / C T25 –
V R = 2 V, V R = 25 V, f = 1 MHz 6 6.7 7.5
Capacitance ratio C T1 / C T28 –
V R = 1 V, V R = 28 V, f = 1 MHz 8.2 8.9 9.8
Capacitance matching ∆ C T / C T %
V R = 1 ... 28 V, f = 1 MHz – – 2.5
Series resistance r s Ω
V R = 3 V, f = 470 MHz – 0.55 0.65
Series inductance L s – 2 – nH