BB301
器件描述：Build in Biasing Circuit MOS FET IC UHF RF Amplifier
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：46.12KB，共10页
Sponsor by e络盟器件资料摘要：
BB301M
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-506
1st. Edition
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
1. Source
2. Gate1
3. Gate2
4. Drain
MPAK-4
1
4
3
2
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-506
1st. Edition
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
1. Source
2. Gate1
3. Gate2
4. Drain
MPAK-4
1
4
3
2