BB102M
器件描述：Build in Biasing Circuit MOS FET IC UHF RF Amplifier
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：64.54KB，共11页
Sponsor by e络盟器件资料摘要：
BB102M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-587 (Z)
1st. Edition
November 1997
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 2.1 dB typ. at f = 900 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
1
4
3
2
1. Source
2. Gate1
3. Gate2
4. Drain
• Note 1 Marking is “BW–”.
• Note 2 BB302M is individual type number of HITACHI BBFET.
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-587 (Z)
1st. Edition
November 1997
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 2.1 dB typ. at f = 900 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
1
4
3
2
1. Source
2. Gate1
3. Gate2
4. Drain
• Note 1 Marking is “BW–”.
• Note 2 BB302M is individual type number of HITACHI BBFET.