BAY80
Vishay Telefunken
Rev. 2, 01-Apr-99 1 (4)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85553
Silicon Epitaxial Planar Diode
Applications
General purpose
94 9367
Absolute Maximum Ratings
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
RRM
150 V
Reverse voltage V
R
120 V
Peak forward surge current t
p
=1C0109s I
FSM
1 A
Repetitive peak forward current I
FRM
625 mA
Forward current I
F
250 mA
Average forward current I
FAV
200 mA
Junction temperature T
j
175 C0176C
Storage temperature range T
stg
–65...+200 C0176C
Maximum Thermal Resistance
T
j
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, T
L
=constant R
thJA
350 K/W