BAW79A...BAW79D
Aug-20-20011
Silicon Switching Diodes
G01 Switching applications
G01 High breakdown voltage
G01 Common cathode
2
1
3
VPS05162
2
EHA07003
1
2
3
Type Marking Pin Configuration Package
BAW79A
BAW79B
BAW79C
BAW79D
GE
GF
GG
GH
1 = A1
1 = A1
1 = A1
1 = A1
2 = C1/2
2 = C1/2
2 = C1/2
2 = C1/2
3 = A2
3 = A2
3 = A2
3 = A2
SOT89
SOT89
SOT89
SOT89
Maximum Ratings
Parameter Symbol BAW
79A
BAW
79B
BAW
79C
BAW
79D
Unit
Diode reverse voltage V
R
50 100 200 400
V
Peak reverse voltage V
RM
50 100 200 400
Forward current I
F
1 A
Peak forward current I
FM
1
Surge forward current, t = 1 G01s
I
FS
10
Total power dissipation, T
S
= 115 °C
P
tot
1 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01 35 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance