BAW 78M
Semiconductor Group
Jul-27-19981
Silicon Switching Diode
Preliminary data
• Switching applications
• High breakdown voltage
VPW05980
1
2
3
5
4
Type Marking Ordering Code Pin Configuration Package
BAW 78M GDs Q62702-A3471 1 = A 2 = C 3 n.c. SCT-5954 n.c. 5 = C
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage V
R
400 V
Peak reverse voltage V
RM
400
Forward current I
F
1 A
Peak forward current I
FM
1
Surge forward current, t = 1 m s I
FS
10
Total power dissipation, T
S
£ 110 °C
P
tot
1 W
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
£ 95
K/W
Junction - soldering point R
thJS
£ 40
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Semiconductor Group 1 1998-11-01