BAW78M
Aug-21-20011
Silicon Switching Diode
G01 Switching applications
G01 High breakdown voltage
VPW05980
1
2
3
5
4
Type Marking Pin Configuration Package
BAW78M GDs 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT595
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
V
R
400 V
Peak reverse voltage
V
RM
400
Forward current
I
F
1 A
Peak forward current
I
FM
1
Surge forward current, t = 1 G01s I
FS
10
Total power dissipation, T
S
G02G03110 °C P
tot
1 W
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01 40 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance