Semiconductor Group 1
Maximum Ratings per Diode
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
GE
GF
GG
GH
SOT-89
Parameter Symbol Values Unit
Reverse voltage VR 50 V
Forward current IF 1A
Junction temperature Tj 150 ˚C
Total power dissipation
TS = 115 ˚C
Ptot 1W
Storage temperature range Tstg – 65 … + 150
Peak reverse voltage VRM 50
Surge forward current
t = 1 µs
IFS 10
Peak forward current IFM 1
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 175 K/W
BAW BAW BAWBAW
100
100
200
200
400
400
Junction - soldering point Rth JS ≤ 35
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 For high-speed switching
a71 High breakdown voltage
a71 Common cathode
Silicon Switching Diodes BAW 79 A
… BAW 79 D
5.91