Feb-03-2003
1
BAW78.../BAW79...
Silicon Switching Diodes
G01 Switching applications
G01 High breakdown voltage
BAW79DBAW78D
G33G31G32
G32
G33G31G32
G32
Type Package Configuration Marking
BAW78D
BAW79D
SOT89
SOT89
single
common cathode
GD
GH
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
400 V
Peak reverse voltage V
RM
400
Forward current I
F
1 A
Peak forward current I
FM
1
Surge forward current, t = 1 µs I
FS
10
Total power dissipation
BAW78D, T
S
≤ 125°C
BAW79D, T
S
≤ 115°C
P
tot

1
1
W
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)

BAW78D
BAW79D
R
thJS

≤ 25
≤ 35
K/W