BAW78A...BAW78D
1 Aug-20-2001
Silicon Switching Diodes
G01 Switching applications
G01 High breakdown voltage
2
1
3
VPS05162
2
21
EHA07007
Type Marking Pin Configuration Package
BAW78A
BAW78B
BAW78C
BAW78D
GA
GB
GC
GD
1 = A
1 = A
1 = A
1 = A
2 = C
2 = C
2 = C
2 = C
3 = n.c.
3 = n.c.
3 = n.c.
3 = n.c.
SOT89
SOT89
SOT89
SOT89
Maximum Ratings
Parameter Symbol BAW
78A
BAW
78B
BAW
78C
BAW
78D
Unit
Diode reverse voltage V
R
50 100 200 400
V
Peak reverse voltage V
RM
50 100 200 400
Forward current I
F
1 A
Peak forward current I
FM
1
Surge forward current, t = 1 G01s
I
FS
10
Total power dissipation, T
S
= 125 °C
P
tot
1 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01 25 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance