BAW56WT1
器件描述:Dual Switching Diodes
文件大小:56.55KB,共2页
Sponsor by e络盟
器件资料摘要:
LESHAN RADIO COMPANY, LTD.
BAW56WT1–1/2
DEVICE MARKING
BAW56WT1 = A1
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Reverse Voltag VR 70 Vdc
Forward Current IF 200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
PD 200 mW
TA = 25°C
Derate above 25°C 1.6 mW/°C
Thermal Resistance, Junction to Ambient RθJA 0.625 °C/W
Total Device Dissipation PD 300 mW
Alumina Substrate
(2)
TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage V(BR) 70 — Vdc
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current IR µAdc
(VR = 25 Vdc, TJ = 150°C) — 30
(VR = 70 Vdc) — 2.5
(VR = 70 Vdc, TJ = 150°C) — 50
Diode Capacitance CD — 2.0 pF
(VR = 0, f = 1.0 MHz)
Forward Voltage VF mVdc
(IF = 1.0 mAdc) — 715
(IF = 10 mAdc) — 855
(IF = 60 mAdc) — 1000
(IF = 150 mAdc) — 1250
Reverse Recovery Time trr — 6.0 ns
(IF = IR = 10 mAdc, RL = 100 Ω, IR(REC) = 1.0 mAdc) (Figure 1)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
Dual Switching Diodes
1
3
2
BAW56WT1
CASE 419–04, STYLE 4
SOT–323 (SC–70)
3
ANODE
CATHODE
1
CATHODE
2