BA
W74
BAW74, Rev. A
BAW74
Small Signal Diode
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2002 Fairchild Semiconductor Corporation
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SOT-23
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2
3
JD
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted

Symbol

Parameter

Value

Units
V
RRM
Maximum Repetitive Reverse Voltage 50 V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond

1.0
2.0

A
A
T
stg

Storage Temperature Range -55 to +150 °C
T
J

Operating Junction Temperature 150 °C
Thermal Characteristics
Electrical Characteristics T
A
= 25°C unless otherwise noted

Symbol

Parameter

Value

Units
P
D
Power Dissipation 350 mW
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W

Symbol

Parameter Test Conditions Min

Max

Units
V
R
Breakdown Voltage
I
R
= 100 µA 50
V
V
F
* Forward Voltage
I
F
= 100 mA 1.0
V
I
R
* Reverse Current
V
R
= 50 V, T
A
= 150°C 100
µA
C
T
Total Capacitance
V
R
= 0, f = 1.0 MHz
2.0 pF
t
rr

Reverse Recovery Time I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100 Ω

4.0 ns
*Pulse test : Pulse width=300us, Duty Cycle=2%
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3
Connection Diagram