LESHAN RADIO COMPANY, LTD.
G13–1/2
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V R 70 Vdc
Forward Current I F 200 mAdc
Peak Forward Surge Current I FM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR- 5 Board (1) P D 225 mW
T A = 25 °C
erate above 25 °C 1.8 mW /°C
Thermal Resistance, Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D 300 mW
Alumina Substrate,
(2)
T A = 25 °C
Derate above 25 °C 2.4 mW /°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg -55 to +150 °C
DEVICE MARKING
BAW56LT1 = A1
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage V (BR) 70 – Vdc
(I (BR) = 100 µAdc)
Reverse Voltage Leakage Current I R µAdc
(V R = 25 Vdc, T J = 150 °C) – 30
(V R = 70 Vdc) – 2.5
(V R = 70 Vdc, T J = 150 °C) – 50
Diode Capacitance C D – 2.0 pF
(V R = 0, f = 1.0 MHz)
Forward Voltage V F mVdc
(I F = 1.0 mAdc) – 715
(I F = 10 mAdc) – 855
(I F = 50 mAdc) – 1000
(I F = 150 mAdc) – 1250
Reverse Recovery Time t rr – 6.0 ns
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Monolithic Dual Switching Diode
Common Anode
3
ANODE
1
CATHODE
2
CATHODE
CASE 318–08, STYLE12
SOT– 23 (TO–236AB)
BAW56LT1
1
3
2