BAW56
器件描述:Surface Mount Silicon Planar Dual Small-Signal Diodes (common anode)
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Sponsor by e络盟
器件资料摘要:
1
) Mounted on P.C. board with 25 mm
2
copper pads at each terminal
Montage auf Leiterplatte mit 25 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
104.02.2003
BAW 56
Surface Mount Silicon Planar Silizium-Planar-Doppel-Dioden
Dual Small-Signal Diodes für die Oberflächenmontage
(common anode) (gemeinsame Anode)
Nominal current – Nennstrom 250 mA
Repetitive peak reverse voltage 70 V
Periodische Spitzensperrspannung
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Dimensions / Maße in mm
1 = cathode 1 2 = cathode 2
3 = common / gemeinsame anode
Standard packaging taped and reeled see page 18
Standard Lieferform gegurtet auf Rolle siehe Seite 18
Maximum ratings Grenzwerte
Repetitive peak reverse voltage V
RRM
70 V
Periodische Spitzensperrspannung
Max. average forward current D1 + D2 I
FAV
250 mA
1
)
Dauergrenzstrom
Repetitive peak forward current f > 15 Hz I
FRM
450 mA
1
)
Periodischer Spitzenstrom
Peak forward surge current T
j
= 25g47Ct
p
= 1 g58s I
FSM
2 A
Stoßstrom-Grenzwert t
p
= 1 ms I
FSM
1 A
t
p
= 1 s I
FSM
0.5 A
Operating junction temperature – Sperrschichttemperatur T
j
– 50...+ 150g47C
Storage temperature – Lagerungstemperatur T
S
– 50...+ 150g47C
Characteristics Kennwerte
Forward voltage T
j
= 25g47CI
F
= 1 mA V
F
< 715 mV
Durchlaßspannung I
F
= 10 mA V
F
< 855 mV
I
F
= 50 mA V
F
< 1.0 V
I
F
= 0.15 A V
F
< 1.25 V
Leakage current T
j
= 25g47CV
R
= V
RRM
I
R
< 2.5 g58A
Sperrstrom T
j
= 150g47CV
R
= V
RRM
I
R
< 50 g58A
T
j
= 150g47CV
R
= 25 V I
R
< 30 g58A
2.5
ma
x
1.
3
±0
.
1
1.1 2.9
±0.1
0.4
1 2
3