High Conductance Ultra Fast Diode
Sourced from Process 1P. See BAV99 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
BAW56
Symbol Characteristic Max Units
BAW56
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
Rθ
JA
Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Value Units
W
IV
Working Inverse Voltage 70 V
I
O
Average Rectified Current 200 mA
I
F
DC Forward Current 600 mA
if
Recurrent Peak Forward Current 700 mA
i
f(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
2.0
A
A
Tstg
Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperature 150 °C
A1
3
12
SOT-23
3
1
2
3
21
CONNECTION DIAGRAMS
B
A
W56
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation