1. CATHODE
2. CATHODE
3. ANODE
32-TOS3S
(1)
(3)
(2)
(UNITS: mm)
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com
SEMICONDUCTOR
TECHNICAL SPECIFICATION

BAW56
RECTRON
SURFACE MOUNT, DUAL 1N4148 COMMON ANODE DIODE
Absolute Maximum Ratings (Ta=25
°
C)
Items Symbol Ratings Unit
Reverse VoltageVRRM 85 V
Reverse
Recovery Time
trr 4 ns
Forward Voltage
@ If = 50 mA
VF 1.0 V
Forward Current IF 215 mA
Junction Temp. Tj -55 to 150
°
C
Storage Temp. Tstg -55 to 150
°
C
Mechanical Data
Items Materials
Package SOT-23
Lead Frame 42 Alloy
Lead Finish Solder Plating
Bond Wire Au
Mold Resin Epoxy
Chip Silicon
Electrical Characteristics per Diode (Ta=25
°
C)
Ratings Symbol Ratings Unit
Reverse Breakdown Voltage IR= 100uA VBR 75 V
Repetitive Peak Reverse Voltage VRRM 85 V
Repetitive Peak Forward Current IFRM 450 mA
Forward Voltage
IF= 1mA
IF= 10mA
IF= 50mA
IF= 150mA
VF
715
855
1000
1250
mV
Reverse Current
VR= 75V
VR= 25V (Tj= 150
°
C)
VR= 75V (Tj= 150
°
C)
IR
1.0
30
50
uA
Junction Capacitance VR = 0 V, f = 1MHz Cj 2.0 pF
Reverse Recovery Time IF= IR= 10mA; RL= 100 ohms trr 4 ns
Thermal Resistance (junction to ambient) R
Θ
JA 500
°
C/W