Sep-24-2003
1
BAW101...
Silicon Switching Diode
• Electrically insulated high-voltage
medium-speed diodes
BAW101
G31
G44 G32
G32
G33G34
G44 G31
Type Package Configuration Marking
BAW101 SOT143 parallel JPs
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
300 V
Peak reverse voltage V
RM
300
Forward current I
F
250 mA
Peak forward current I
FM
500
Surge forward current, t = 1 µs I
FS
4.5 A
Total power dissipation
T
S
≤ 35°C
P
tot
350 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)

BAW101
R
thJS
≤ 330
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance