EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BAW156LT1

器件描述:Monolithic Dual Switching Diode
器件厂商:LRC [Leshan Radio Company]
文件大小:38.53KB,共2页
Sponsor by e络盟
器件资料摘要:
LESHAN RADIO COMPANY, LTD.
G14–1/2
BAW156LT1
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
70 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board
(1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θ JA
556 °C/W
Total Device Dissipation P
D
300 mW
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θ JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BAW156LT1 = JZ
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)(EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
(BR)
= 100 µAdc) V
(BR)
70 — Vdc
Reverse Voltage Leakage Current I
R
nAdc
(V
R
= 70 Vdc) — 5.0
(V
R
= 70 Vdc,T
J
=150°C) — 80
Diode Capacitance(V
R
=0V,f=1.0MHz) C
D
— 2.0 pF
Forward Voltage
(I
F
= 1.0 mAdc) V
F
— 900 mVdc
(I
F
= 10 mAdc) — 1000
(I
F
= 50 mAdc) — 1100
(I
F
= 150 mAdc) — 1250
Reverse Recovery Time
t
rr
— 3.0 µs
(I
F
= I
R
= 10 mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Monolithic Dual Switching Diode
This switching diode has the following features:
• Low Leakage Current Applications
Medium Speed Switching Times
Available in 8mm Tape and Reel
Use BAW156LT1 to order the 7 inch/3,000 unit reel
Use BAW156LT3 to order the 13inch/10,000 unit reel
1
3
2
CASE 318–08, STYLE12
SOT– 23 (TO–236AB)
2
ANODE
CATHODE
1
ANODE
3