Semiconductor Group 1
Silicon Switching Diode Array BAW 101
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BAW 101 Q62702-A712JPs SOT-143
Parameter Symbol Values Unit
Reverse voltage VR 300 V
Forward current IF 250 mA
Junction temperature Tj 150 ˚C
Total power dissipation, TS ≤ 35 ˚C Ptot 350 mW
Storage temperature range Tstg – 65 … + 150
Peak reverse voltage VRM 300
Surge forward current, t = 1 µs IFS 4.5 A
Peak forward current IFM 500
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 470 K/W
Junction - soldering point Rth JS ≤ 330
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 Electrically insulated high-voltage
medium-speed diodes
5.91