BAV 99S
Semiconductor Group
Apr-27-19981
Silicon Switching Diode Array
• For high-speed switching applications
• Connected in series
• Internal (galvanic) isolated Diodes
in one package
VPS05604
6
3
1
5
4
2
Type Marking Ordering Code PackagePin Configuration
A7s Q62702-A1277 1/4 = A1 2/5 = C2 3/6=C1/A2 SOT-363BAV 99S
Maximum Ratings
Parameter ValueSymbol Unit
VV
R
70Diode reverse voltage
Peak reverse voltage V
RM
70
200 mAForward current I
F
AI
FS
Surge forward current, t = 1 m s 4.5
Total power dissipation, T
S
= 85 °C P
tot
250 mW
150 °CJunction temperature T
j
Storage temperature T
stg
65 ...+150
Thermal Resistance
K/WJunction - ambient
1)
R
thJA
£ 530
Junction - soldering point R
thJS
£ 260
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group 1 1998-11-01