1Motorola Small–Signal Transistors, FETs and Diodes Device Data

C0068C0117C0097C0108 C0083C0101C0114C0105C0101C0115 C0083C0119C0105C0116C0099C0104C0105C0110C0103 C0068C0105C0111C0100C0101
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
R
70 Vdc
Forward Current I
F
215 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
Repetitive Peak Reverse Voltage V
RRM
70 V
Average Rectified Forward Current
(1)
(averaged over any 20 ms period)
I
F(AV)
715 mA
Repetitive Peak Forward Current I
FRM
450 mA
Non–Repetitive Peak Forward Current
t = 1.0 C0109s
t = 1.0 ms
t = 1.0 A
I
FSM
2.0
1.0
0.5
A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR–5 Board,
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient R
C0113JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction to Ambient R
C0113JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–65 to +150 °C
DEVICE MARKING
BAV99LT1 = A7
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BAV99LT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0065C0086C0057C0057C0076C0084C0049
Motorola Preferred Device
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
1
2
3
 Motorola, Inc. 1996
3
CATHODE/ANODE
ANODE
1
CATHODE
2