EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BAV99DW

器件描述:QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
器件厂商:DIODES [Diodes Incorporated]
厂商主页:http://www.diodes.com/
文件大小:67.38KB,共3页
Sponsor by e络盟
器件资料摘要:
DS30145 Rev. C-2 1 of 3 BAV99DW
BAV99DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
c183 Case: SOT-363, Molded Plastic
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Polarity: See Diagram
c183 Marking: KJG
c183 Weight: 0.006 grams (approx.)
c183 Case Material - UL Flammability Rating
Classification 94V-0
Mechanical Data
A
M
J
LFD
B C
H
K
AC
1
AC
2
C
2
A
1
A
2
C
1
Features
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.80 2.20
H 1.80 2.20
J c190 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
All Dimensions in mm
c183 Fast Switching Speed
c183 Ultra-Small Surface Mount Package
c183 For General Purpose Switching Applications
c183 High Conductance
c183 Two “BAV99” Circuits In One Package
Characteristic Symbol BAV99DW Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current IFM 215 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0c109s
@ t = 1.0ms
@ t = 1.0s
I
FSM
2.0
1.0
0.5
A
Power Dissipation (Note 1) Pd 200 mW
Thermal Resistance Junction to Ambient Air (Note 1) Rc113JA 625 c176C/W
Power Dissipation (Note 2) Pd 300 mW
Thermal Resistance Junction to Ambient Air (Note 2) Rc113JA 417 c176C/W
Operating and Storage Temperature Range Tj ,TSTG -65 to +150 c176C
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Device mounted on Alumina PCB, 0.4 inch x 0.3 inch x 0.024 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage VFM c190
0.715
0.855
1.0
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Maximum Peak Reverse Current IRM c190
2.5
50
30
25
c109A
c109A
c109A
nA
V
R
= 75V
V
R
= 75V, T
j
= 150c176C
V
R
= 25V, T
j
= 150c176C
V
R
= 20V
Junction Capacitance Cj c190 2.0 pF VR = 0, f = 1.0MHz
Reverse Recovery Time trr c190 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
,R
L
= 100c87
Electrical Characteristics @ TA = 25c176C unless otherwise specified
NEW
PRODUCT