T P U . 3 4 ) Q B D L B H F *
BAV99

Description
The BAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and thin-film circuits.

Package Dimensions
Style : Pin1.Anode 2.Cathode
3.Common Connection
Millimeter Millimeter REF.
Min. Max. REF. Min. Max.
A 2.70 3.10 G 1.90 REF.
B 2.40 2.80 H 1.00 1.30
C 1.40 1.60 K 0.10 0.20
D 0.35 0.50 J 0.40 -
E 0 0.10 L 0.85 1.15
F 0.45 0.55 M 0 C 10 C

Absolute Maximum Ratings at Ta = 25 : : : :
Parameter Symbol Ratings Unit
Junction Temperature Tj +150
Storage Temperature Tstg -65~+150
Reverse Voltage 70 V
Repetitive Reverse Voltage 70 V
Forward Current 150 mA
Repetitive Forward Current 500 mA
Forward Surge Current(1ms) 1000 mA
Total Power Dissipation PD 250 mW

Characteristics at Ta = 25 : : : :
Characteristic Symbol Min. Max. Unit Test Conditions
Reverse Breakdown Voltage V(BR) 70 - V IR=100uA
VF(1) - 715 mV IF=1mA
VF(2) - 855 mV IF=10mA
VF(3) - 1000 mV IF=50mA
Forward Voltage
VF(4) - 1250 mV IF=150mA
Reverse Current IR - 2.5 uA VR=70V
Total Capacitance CT 1.5 pF VR=0, f=1MHz
Reverse Recovery Time Trr - 6 nS IF=IR=10mA, RL=100 Ł measured at IR=1mA







Formosa MS