B
A
V99
BAV99, Rev. B
Small Signal Diode
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics

Symbol

Parameter

Value

Units
V
RRM
Maximum Repetitive Reverse Voltage 70 V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond

1.0
2.0

A
A
T
stg

Storage Temperature Range -55 to +150 °C
T
J
Operating Junction Temperature 150 °C

BAV99
SOT-23
3
1
2
2001 Fairchild Semiconductor Corporation

Symbol

Parameter

Test Conditions

Min

Max

Units
V
R
Breakdown Voltage I
R
= 100 µA 70 V
V
F
Forward Voltage

I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
715
855
1.0
1.25
mV
mV
V
V
I
R
Reverse Current V
R
= 70 V
V
R
= 25 V, T
A
= 150°C
V
R
= 70 V, T
A
= 150°C
2.5
30
50
µA
µA
µA
C
T
Total Capacitance V
R
= 0, f

= 1.0 MHz 1.5 pF
t
rr
Reverse Recovery Time I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100Ω
6.0 ns

Electrical Characteristics T
A
= 25°C unless otherwise noted

Symbol

Parameter

Value

Units
P
D
Power Dissipation 350 mW
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W

1
2
3
A7
12
3
Connection Diagram