LESHAN RADIO COMPANY, LTD.
G6–1/2
1
ANODE
2
ANODE
3
CATHODE
1
3
2
DEVICE MARKING
BAV74LT1 = JA
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
R
50 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board (1) P
D
225 mW
T
A
= 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) ( EACH DIODE )
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 5.0 µAdc)
V
(BR)
50 — Vdc
Reverse Voltage Leakage Current I
R
µAdc
(V
R
= 50 Vdc, T
J
= 125°C) — 100
(V
R
= 50Vdc) — 0.1
Diode Capacitance
C
D
— 2.0 pF
(V
R
= 0, f = 1.0 MHz)
Forward Voltage V
F
Vdc
(I
F
= 100 mAdc) — 1.0
Reverse Recovery Time
t
rr
— 4.0 ns
(I
F
=I
R
=10mAdc, I
R(REC)
=1.0mAdc, measured at I
R
= 1.0 mA, R
L
=100Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BAV74LT1
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
Monolithic Dual Switching Diode