LESHAN RADIO COMPANY, LTD.
BAV70WT1–1/3
Dual Switching Diodes
1
3
2
BAV70WT1
CASE 419–04, STYLE 5
SOT–323 (SC–70)
3
CATHODE
ANODE
1
ANODE
2
DEVICE MARKING
BAV70WT1 = A4
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Max Unit
Reverse Voltage V
R
70 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
PD 200 mW
TA = 25°C
Derate above 25°C 1.6 mW/°C
Thermal Resistance, Junction to Ambient RθJA 0.625 °C/W
Total Device Dissipation PD 300 mW
Alumina Substrate
(2)
TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage V(BR) 70 — Vdc
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(V
R
= 70 Vdc) I
R1
— 5.0 µAdc
(V
R
= 50 Vdc) I
R2
— 100 nAdc
Diode Capacitance C
D
— 1.5 pF
(V
R
= 0, f = 1.0 MHz)
Forward Voltage V
F
mVdc
(I
F
= 1.0 mAdc) — 715
(I
F
= 10 mAdc) — 855
(I
F
= 50 mAdc) — 1000
(I
F
= 150 mAdc) — 1250
Reverse Recovery Time t
rr
— 6.0 ns
(I
F
= I
R
=10 mAdc, R
L
= 100Ω, I
R(REC)
= 1.0 mAdc) (Figure 1)
Forward Recovery Voltage V
RF
— 1.75 V
(I
F
= 10 mAdc, t
r
= 20 ns) (Figure 2)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
3.For each individual diode while the seeond diode is unbiased.