1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0068C0117C0097C0108 C0083C0119C0105C0116C0099C0104C0105C0110C0103 C0068C0105C0111C0100C0101
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Max Unit
Reverse Voltage V
R
70 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
200
1.6
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
0.625 °C/W
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
A4
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100 µAdc)
V
(BR)
70 — Vdc
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 50 Vdc)
I
R1
I
R2
—
—
5.0
100
µAdc
nAdc
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
— 1.5 pF
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
—
—
—
—
715
855
1000
1250
mVdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 100 Ω, I
R(REC)
= 1.0 mAdc) (Figure 1)
t
rr
— 6.0 ns
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns) (Figure 2)
V
RF
— 1.75 V
1. FR–5 = 1.0 C0002 0.75 C0002 0.062 in.
2. Alumina = 0.4 C0002 0.3 C0002 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BAV70WT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0065C0086C0055C0048C0087C0084C0049
Motorola Preferred Device
CASE 419–02, STYLE 5
SC–70/SOT–323
1
2
3
 Motorola, Inc. 1997
3
CATHODE
ANODE
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