Zowie Technology Corporation
Monolithic Dual Switching Diode
BAV74
1
2
3
SOT-23
ANODE
ANODE
CATHODE
3
1
2
Rating Symbol Value Unit
Characteristic Symbol Min. Max. Unit
Continuous Reverse Voltage VR 50 Vdc
Peak Forward Current IF 200 mAdc
Peak Forward Surge Current IFM( surge ) 500 mAdc
Characteristic Symbol Max. Unit
Total Device Dissipation FR-5 Board
(1)
TA=25
o
C
Derate above 25
o
C
PD
225
1.8
mW
mW /
o
C
Total Device Dissipation Alumina Substrate,
(2)
TA=25
o
C
Derate above 25
o
C
PD
VF
300
2.4
- 1000
mW
mW /
o
C
Thermal Resistance, Junction to Ambient 556
o
C / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted) (EACH DIODE)
V(BR) 50 - Vdc
mVdc
OFF CHARACTERISTICS
R JA
Thermal Resistance, Junction to Ambient 417
o
C / WR JA
Junction and Storage Temperature
Forward Voltage ( IF=100 mAdc )
IR
( VR=50 Vdc )
( VR=50 Vdc, TJ=125
o
C )
-
-
0.1
100
uAdcReverse Voltage Leakage Current
Reverse Breakdown Voltage
( IBR=5.0 uAdc )
CJ - 2.0 pF
Diode Capacitance
( VR=0, f=1.0MHZ )
trr - 4.0 nS
BAV74=JA
-55 to +150
o
CTJ,TSTG
Reverse Recovery Time
( IF=IR=10 mAdc, IR(REC=1.0mAdc, measured at IR=1.0mA RL=100 )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
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